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| savantic semiconductor product specification silicon pnp power transistors 2SA1141 description with to-3pfa package complement to type 2sc2681 high transition frequency applications audio frequency power amplifier high frequency power amplifier pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -115 v v ceo collector-emitter voltage open base -115 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -15 a t c =25 100 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1141 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-4.5a ;i b =-0.45a -0.7 -1.5 v v be base-emitter on voltage i c =-4.5a ; v ce =-2v -1.2 -2.0 v i cbo collector cut-off current v cb =-80v; i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe -1 dc current gain i c =-1a ; v ce =-2v 60 200 h fe -2 dc current gain i c =-4.5a ; v ce =-2v 40 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 390 pf f t transition frequency i c =-1a ; v ce =-2v 90 mhz h fe-1 classifications r q 60-120 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SA1141 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) |
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